Dynamics of charges in
semiconductors
Ballistic devices are characterized by an active region where carriers, once
injected from the contacts, move without suffering any scattering from
contact to contact (i.e. the carriers mean free path is much longer than the
device active region).
Among the topics we are interested on are:
- Evaluation of the transport properties of ballistic diodes with and without doping.
- Characterization of non-equilibrium current noise in ballistic conductors due to fluctuations in the injection of charge on the contacts.
Colaborators:
Gabriel Gomila,
Universidad de Barcelona
Lino Reggiani, Universita di Lecce
Tomás González, Universidad de Salamanca
